Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

In silicon-based piezoresistive pressure sensor, the accuracy of sensor is affected mainly by thermal drift and sensitivity varies with rise in temperature. Here, temperature effects on desired representation are analysed. Use smart material Carbon nanotubes (CNT) a few effective compensation techniques presented this study to reduce effect sensor. Resistive employed extra piezoresistors Negative Temperature Coefficient Resistivity (TCR) for compensation. The attainment highly compatible MEMS device fabrication. compensated supremacy measurement variations. Though various have been suggested put into actuality successful attainment, featuring easy implementation perfect compatibility existing schemes still blooming demanded design comprehensive performance. paper, CNT has as sensing elements compared silicon terms output voltage performance degradation at higher Pressure sensors using piezo resistive materials were simulated (100) diaphragm ANYSIS. Based simulation results, both also shows better results near room With increasing it observed that underestimated 23%.